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NJVMJD122T4G

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Nambari ya Sehemu	NJVMJD122T4G
LIXINC Part #	NJVMJD122T4G
Mtengenezaji	Rochester Electronics
Kategoria	semiconductor tofauti › transistors - bipolar (bjt) - moja
Maelezo	POWER BIPOLAR TRANSISTOR, 8A, 10
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	NJVMJD122T4G Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 27 - Oct 31 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

NJVMJD122T4G Vipimo

Nambari ya Sehemu:	NJVMJD122T4G
Chapa:	Rochester Electronics
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	semiconductor tofauti
Kitengo kidogo:	transistors - bipolar (bjt) - moja
Mtengenezaji:	Rochester Electronics
mfululizo:	Automotive, AEC-Q101
kifurushi:	Bulk
hali ya sehemu:	Active
aina ya transistor:	NPN - Darlington
sasa - mtoza (ic) (max):	8 A
mgawanyiko wa mtozaji wa mtozaji wa voltage (max):	100 V
vce kueneza (max) @ ib, ic:	4V @ 80mA, 8A
sasa - kata ya mtoza (max):	10µA
dc current gain (hfe) (min) @ ic, vce:	1000 @ 4A, 4V
nguvu - max:	1.75 W
mzunguko - mpito:	4MHz
joto la uendeshaji:	-65°C ~ 150°C (TJ)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	TO-252-3, DPak (2 Leads + Tab), SC-63
kifurushi cha kifaa cha wasambazaji:	DPAK