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MT41K128M16JT-125 IT:K TR

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Nambari ya Sehemu	MT41K128M16JT-125 IT:K TR
LIXINC Part #	MT41K128M16JT-125 IT:K TR
Mtengenezaji	Micron Technology
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 2GBIT PARALLEL 96FBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	MT41K128M16JT-125 IT:K TR Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 24 - Oct 28 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

MT41K128M16JT-125 IT:K TR Vipimo

Nambari ya Sehemu:	MT41K128M16JT-125 IT:K TR
Chapa:	Micron Technology
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	Micron Technology
mfululizo:	-
kifurushi:	Tape & Reel (TR)Cut Tape (CT)
hali ya sehemu:	Active
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	SDRAM - DDR3L
saizi ya kumbukumbu:	2Gb (128M x 16)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	800 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	13.75 ns
voltage - ugavi:	1.283V ~ 1.45V
joto la uendeshaji:	-40°C ~ 95°C (TC)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	96-TFBGA
kifurushi cha kifaa cha wasambazaji:	96-FBGA (8x14)