IS45S16160G-6TLA1 -TR | ISSI (Integrated Silicon Solution, Inc.) IS45S16160G-6TLA1 -TR | IS45S16160G-6TLA1 -TR Inventory, Best Pricing

IS45S16160G-6TLA1 -TR

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Nambari ya Sehemu	IS45S16160G-6TLA1 -TR
LIXINC Part #	IS45S16160G-6TLA1 -TR
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 256MBIT PAR 54TSOP II
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS45S16160G-6TLA1 -TR Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 18 - Oct 22 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS45S16160G-6TLA1 -TR Vipimo

Nambari ya Sehemu:	IS45S16160G-6TLA1 -TR
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tape & Reel (TR)
hali ya sehemu:	Not For New Designs
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	SDRAM
saizi ya kumbukumbu:	256Mb (16M x 16)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	166 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	5.4 ns
voltage - ugavi:	3V ~ 3.6V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	54-TSOP (0.400", 10.16mm Width)
kifurushi cha kifaa cha wasambazaji:	54-TSOP II