IS61DDP2B41M18A-400M3L | ISSI (Integrated Silicon Solution, Inc.) IS61DDP2B41M18A-400M3L | IS61DDP2B41M18A-400M3L Inventory, Best Pricing

IS61DDP2B41M18A-400M3L

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Nambari ya Sehemu	IS61DDP2B41M18A-400M3L
LIXINC Part #	IS61DDP2B41M18A-400M3L
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC SRAM 18MBIT PARALLEL 165LFBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS61DDP2B41M18A-400M3L Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 24 - Oct 28 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS61DDP2B41M18A-400M3L Vipimo

Nambari ya Sehemu:	IS61DDP2B41M18A-400M3L
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Active
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	SRAM
teknolojia:	SRAM - Synchronous, DDR IIP
saizi ya kumbukumbu:	18Mb (1M x 18)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	400 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	-
voltage - ugavi:	1.71V ~ 1.89V
joto la uendeshaji:	0°C ~ 70°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	165-LBGA
kifurushi cha kifaa cha wasambazaji:	165-LFBGA (15x17)