IS61WV25616EDALL-20BLI | ISSI (Integrated Silicon Solution, Inc.) IS61WV25616EDALL-20BLI | IS61WV25616EDALL-20BLI Inventory, Best Pricing

IS61WV25616EDALL-20BLI

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Nambari ya Sehemu	IS61WV25616EDALL-20BLI
LIXINC Part #	IS61WV25616EDALL-20BLI
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC SRAM 4MBIT PARALLEL 48TFBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS61WV25616EDALL-20BLI Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 19 - Oct 23 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS61WV25616EDALL-20BLI Vipimo

Nambari ya Sehemu:	IS61WV25616EDALL-20BLI
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Active
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	SRAM
teknolojia:	SRAM - Asynchronous
saizi ya kumbukumbu:	4Mb (256K x 16)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	-
andika wakati wa mzunguko - neno, ukurasa:	20ns
muda wa kufikia:	20 ns
voltage - ugavi:	1.65V ~ 2.2V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	48-TFBGA
kifurushi cha kifaa cha wasambazaji:	48-TFBGA (6x8)