IS43DR86400E-3DBLI-TR | ISSI (Integrated Silicon Solution, Inc.) IS43DR86400E-3DBLI-TR | IS43DR86400E-3DBLI-TR Inventory, Best Pricing

IS43DR86400E-3DBLI-TR

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Nambari ya Sehemu	IS43DR86400E-3DBLI-TR
LIXINC Part #	IS43DR86400E-3DBLI-TR
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 512MBIT PARALLEL 60TWBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS43DR86400E-3DBLI-TR Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 18 - Oct 22 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS43DR86400E-3DBLI-TR Vipimo

Nambari ya Sehemu:	IS43DR86400E-3DBLI-TR
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tape & Reel (TR)
hali ya sehemu:	Active
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	SDRAM - DDR2
saizi ya kumbukumbu:	512Mb (64M x 8)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	333 MHz
andika wakati wa mzunguko - neno, ukurasa:	15ns
muda wa kufikia:	450 ns
voltage - ugavi:	1.7V ~ 1.9V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	60-TFBGA
kifurushi cha kifaa cha wasambazaji:	60-TWBGA (8x10.5)