IS61NLP12836EC-200B3LI | ISSI (Integrated Silicon Solution, Inc.) IS61NLP12836EC-200B3LI | IS61NLP12836EC-200B3LI Inventory, Best Pricing

IS61NLP12836EC-200B3LI

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Nambari ya Sehemu	IS61NLP12836EC-200B3LI
LIXINC Part #	IS61NLP12836EC-200B3LI
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC SRAM 4.5MBIT PAR 165TFBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS61NLP12836EC-200B3LI Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 22 - Oct 26 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS61NLP12836EC-200B3LI Vipimo

Nambari ya Sehemu:	IS61NLP12836EC-200B3LI
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Active
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	SRAM
teknolojia:	SRAM - Synchronous, SDR
saizi ya kumbukumbu:	4.5Mb (128K x 36)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	200 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	3.1 ns
voltage - ugavi:	3.135V ~ 3.465V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	165-TBGA
kifurushi cha kifaa cha wasambazaji:	165-TFBGA (13x15)