IS43R86400E-6TLI | ISSI (Integrated Silicon Solution, Inc.) IS43R86400E-6TLI

IS43R86400E-6TLI

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Nambari ya Sehemu	IS43R86400E-6TLI
LIXINC Part #	IS43R86400E-6TLI
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 512MBIT PAR 66TSOP II
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS43R86400E-6TLI Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 17 - Oct 21 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS43R86400E-6TLI Vipimo

Nambari ya Sehemu:	IS43R86400E-6TLI
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Active
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	SDRAM - DDR
saizi ya kumbukumbu:	512Mb (64M x 8)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	166 MHz
andika wakati wa mzunguko - neno, ukurasa:	15ns
muda wa kufikia:	700 ps
voltage - ugavi:	2.3V ~ 2.7V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	66-TSSOP (0.400", 10.16mm Width)
kifurushi cha kifaa cha wasambazaji:	66-TSOP II