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CY7C10212DV33-10BVXI

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Nambari ya Sehemu	CY7C10212DV33-10BVXI
LIXINC Part #	CY7C10212DV33-10BVXI
Mtengenezaji	Rochester Electronics
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC SRAM 1MBIT PARALLEL 48TFBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	CY7C10212DV33-10BVXI Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 18 - Oct 22 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

CY7C10212DV33-10BVXI Vipimo

Nambari ya Sehemu:	CY7C10212DV33-10BVXI
Chapa:	Rochester Electronics
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	Rochester Electronics
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Obsolete
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	SRAM
teknolojia:	SRAM - Asynchronous
saizi ya kumbukumbu:	1Mb (64K x 16)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	-
andika wakati wa mzunguko - neno, ukurasa:	10ns
muda wa kufikia:	10 ns
voltage - ugavi:	3V ~ 3.6V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	48-TFBGA
kifurushi cha kifaa cha wasambazaji:	48-TFBGA (6x8)