CY7C1614KV18-250BZC | Rochester Electronics CY7C1614KV18-250BZC | CY7C1614KV18-250BZC Inventory, Best Pricing

CY7C1614KV18-250BZC

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Nambari ya Sehemu	CY7C1614KV18-250BZC
LIXINC Part #	CY7C1614KV18-250BZC
Mtengenezaji	Rochester Electronics
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	QDR SRAM, 4MX36, CMOS, PBGA165
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	CY7C1614KV18-250BZC Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 19 - Oct 23 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

CY7C1614KV18-250BZC Vipimo

Nambari ya Sehemu:	CY7C1614KV18-250BZC
Chapa:	Rochester Electronics
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	Rochester Electronics
mfululizo:	-
kifurushi:	Bulk
hali ya sehemu:	Active
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	SRAM
teknolojia:	SRAM - Synchronous, QDR II
saizi ya kumbukumbu:	144Mb (4M x 36)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	250 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	-
voltage - ugavi:	1.7V ~ 1.9V
joto la uendeshaji:	0°C ~ 70°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	165-LBGA
kifurushi cha kifaa cha wasambazaji:	165-FBGA (15x17)