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MT29C1G12MAAJAFAMD-6 IT

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Nambari ya Sehemu	MT29C1G12MAAJAFAMD-6 IT
LIXINC Part #	MT29C1G12MAAJAFAMD-6 IT
Mtengenezaji	Micron Technology
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC FLASH RAM 1GBIT PAR 130VFBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	MT29C1G12MAAJAFAMD-6 IT Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 26 - Oct 30 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

MT29C1G12MAAJAFAMD-6 IT Vipimo

Nambari ya Sehemu:	MT29C1G12MAAJAFAMD-6 IT
Chapa:	Micron Technology
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	Micron Technology
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Obsolete
aina ya kumbukumbu:	Non-Volatile
muundo wa kumbukumbu:	FLASH, RAM
teknolojia:	FLASH - NAND, Mobile LPDRAM
saizi ya kumbukumbu:	1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	166 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	-
voltage - ugavi:	1.7V ~ 1.95V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	130-VFBGA
kifurushi cha kifaa cha wasambazaji:	130-VFBGA (8x9)