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IS61DDB22M18A-250M3L

IS61DDB22M18A-250M3L
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Nambari ya Sehemu IS61DDB22M18A-250M3L
LIXINC Part # IS61DDB22M18A-250M3L
Mtengenezaji ISSI (Integrated Silicon Solution, Inc.)
Kategoria nyaya zilizounganishwa › kumbukumbu
Maelezo IC SRAM 36MBIT PARALLEL 165LFBGA
Mzunguko wa maisha Inayotumika
RoHS Hakuna Taarifa za RoHS
EDA/CAD Models IS61DDB22M18A-250M3L Alama ya PCB na Alama
Maghala Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa Oct 28 - Nov 01 2024(Chagua Usafirishaji wa Haraka)
Udhamini Hadi mwaka 1 [Dhamana-Chache]*
Malipo Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Usafirishaji DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IS61DDB22M18A-250M3L Vipimo

Nambari ya Sehemu:IS61DDB22M18A-250M3L
Chapa:ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:Active
RoHS:Lead free / RoHS Compliant
Kategoria:nyaya zilizounganishwa
Kitengo kidogo:kumbukumbu
Mtengenezaji:ISSI (Integrated Silicon Solution, Inc.)
mfululizo:-
kifurushi:Tray
hali ya sehemu:Discontinued at Digi-Key
aina ya kumbukumbu:Volatile
muundo wa kumbukumbu:SRAM
teknolojia:SRAM - Synchronous, DDR II
saizi ya kumbukumbu:36Mb (2M x 18)
kiolesura cha kumbukumbu:Parallel
mzunguko wa saa:250 MHz
andika wakati wa mzunguko - neno, ukurasa:-
muda wa kufikia:8.4 ns
voltage - ugavi:1.71V ~ 1.89V
joto la uendeshaji:0°C ~ 70°C (TA)
aina ya ufungaji:Surface Mount
kifurushi / kesi:165-LBGA
kifurushi cha kifaa cha wasambazaji:165-LFBGA (13x15)

IS61DDB22M18A-250M3L Nyaraka

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