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MT49H32M18CSJ-25E:B

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Nambari ya Sehemu	MT49H32M18CSJ-25E:B
LIXINC Part #	MT49H32M18CSJ-25E:B
Mtengenezaji	Micron Technology
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 576MBIT PARALLEL 144FBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	MT49H32M18CSJ-25E:B Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 29 - Nov 02 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

MT49H32M18CSJ-25E:B Vipimo

Nambari ya Sehemu:	MT49H32M18CSJ-25E:B
Chapa:	Micron Technology
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	Micron Technology
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Obsolete
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	DRAM
saizi ya kumbukumbu:	576Mb (32M x 18)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	400 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	15 ns
voltage - ugavi:	1.7V ~ 1.9V
joto la uendeshaji:	0°C ~ 95°C (TC)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	144-TFBGA
kifurushi cha kifaa cha wasambazaji:	144-FBGA (18.5x11)