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AS4C128M16D3LA-12BANTR

AS4C128M16D3LA-12BANTR
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Nambari ya Sehemu AS4C128M16D3LA-12BANTR
LIXINC Part # AS4C128M16D3LA-12BANTR
Mtengenezaji Alliance Memory, Inc.
Kategoria nyaya zilizounganishwa › kumbukumbu
Maelezo IC DRAM 2GBIT PARALLEL 96FBGA
Mzunguko wa maisha Inayotumika
RoHS Hakuna Taarifa za RoHS
EDA/CAD Models AS4C128M16D3LA-12BANTR Alama ya PCB na Alama
Maghala Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa Oct 23 - Oct 27 2024(Chagua Usafirishaji wa Haraka)
Udhamini Hadi mwaka 1 [Dhamana-Chache]*
Malipo Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Usafirishaji DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

AS4C128M16D3LA-12BANTR Vipimo

Nambari ya Sehemu:AS4C128M16D3LA-12BANTR
Chapa:Alliance Memory, Inc.
Mzunguko wa maisha:Active
RoHS:Lead free / RoHS Compliant
Kategoria:nyaya zilizounganishwa
Kitengo kidogo:kumbukumbu
Mtengenezaji:Alliance Memory, Inc.
mfululizo:Automotive, AEC-Q100
kifurushi:Tape & Reel (TR)
hali ya sehemu:Obsolete
aina ya kumbukumbu:Volatile
muundo wa kumbukumbu:DRAM
teknolojia:SDRAM - DDR3L
saizi ya kumbukumbu:2Gb (128M x 16)
kiolesura cha kumbukumbu:Parallel
mzunguko wa saa:800 MHz
andika wakati wa mzunguko - neno, ukurasa:15ns
muda wa kufikia:20 ns
voltage - ugavi:1.283V ~ 1.45V
joto la uendeshaji:-40°C ~ 105°C (TC)
aina ya ufungaji:Surface Mount
kifurushi / kesi:96-VFBGA
kifurushi cha kifaa cha wasambazaji:96-FBGA (8x13)

AS4C128M16D3LA-12BANTR Nyaraka

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