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MT47H32M16BN-5E:D TR

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Nambari ya Sehemu	MT47H32M16BN-5E:D TR
LIXINC Part #	MT47H32M16BN-5E:D TR
Mtengenezaji	Micron Technology
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 512MBIT PARALLEL 84FBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	MT47H32M16BN-5E:D TR Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 25 - Oct 29 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

MT47H32M16BN-5E:D TR Vipimo

Nambari ya Sehemu:	MT47H32M16BN-5E:D TR
Chapa:	Micron Technology
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	Micron Technology
mfululizo:	-
kifurushi:	Tape & Reel (TR)Cut Tape (CT)
hali ya sehemu:	Obsolete
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	SDRAM - DDR2
saizi ya kumbukumbu:	512Mb (32M x 16)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	200 MHz
andika wakati wa mzunguko - neno, ukurasa:	15ns
muda wa kufikia:	600 ps
voltage - ugavi:	1.7V ~ 1.9V
joto la uendeshaji:	0°C ~ 85°C (TC)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	84-TFBGA
kifurushi cha kifaa cha wasambazaji:	84-FBGA (10x12.5)