IS61NVP51236B-200B3I-TR | ISSI (Integrated Silicon Solution, Inc.) IS61NVP51236B-200B3I-TR | IS61NVP51236B-200B3I-TR Inventory, Best Pricing

IS61NVP51236B-200B3I-TR

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Nambari ya Sehemu	IS61NVP51236B-200B3I-TR
LIXINC Part #	IS61NVP51236B-200B3I-TR
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC SRAM 18MBIT PARALLEL 165TFBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS61NVP51236B-200B3I-TR Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 26 - Oct 30 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS61NVP51236B-200B3I-TR Vipimo

Nambari ya Sehemu:	IS61NVP51236B-200B3I-TR
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tape & Reel (TR)
hali ya sehemu:	Obsolete
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	SRAM
teknolojia:	SRAM - Synchronous, SDR
saizi ya kumbukumbu:	18Mb (512K x 36)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	200 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	3 ns
voltage - ugavi:	2.375V ~ 2.625V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	165-TBGA
kifurushi cha kifaa cha wasambazaji:	165-TFBGA (13x15)