NCP5183DR2G | Sanyo Semiconductor/ON Semiconductor NCP5183DR2G

NCP5183DR2G

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Nambari ya Sehemu	NCP5183DR2G
LIXINC Part #	NCP5183DR2G
Mtengenezaji	Sanyo Semiconductor/ON Semiconductor
Kategoria	nyaya zilizounganishwa › pmic - madereva ya lango
Maelezo	IC GATE DRVR HALF-BRIDGE 8SOIC
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	NCP5183DR2G Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 31 - Nov 04 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

NCP5183DR2G Vipimo

Nambari ya Sehemu:	NCP5183DR2G
Chapa:	Sanyo Semiconductor/ON Semiconductor
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	pmic - madereva ya lango
Mtengenezaji:	Sanyo Semiconductor/ON Semiconductor
mfululizo:	-
kifurushi:	Tape & Reel (TR)Cut Tape (CT)
hali ya sehemu:	Active
usanidi unaoendeshwa:	Half-Bridge
aina ya kituo:	Independent
idadi ya madereva:	2
aina ya lango:	N-Channel MOSFET
voltage - ugavi:	9V ~ 18V
voltage ya mantiki - vil, vih:	1.2V, 2.5V
sasa - pato la kilele (chanzo, kuzama):	4.3A, 4.3A
aina ya pembejeo:	Non-Inverting
voltage ya upande wa juu - max (bootstrap):	600 V
wakati wa kupanda / kuanguka (aina):	12ns, 12ns
joto la uendeshaji:	-40°C ~ 125°C (TJ)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	8-SOIC (0.154", 3.90mm Width)
kifurushi cha kifaa cha wasambazaji:	8-SOIC

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