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MJE5852G

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Nambari ya Sehemu	MJE5852G
LIXINC Part #	MJE5852G
Mtengenezaji	Rochester Electronics
Kategoria	semiconductor tofauti › transistors - bipolar (bjt) - moja
Maelezo	POWER BIPOLAR TRANSISTOR, 8A, 40
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	MJE5852G Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 22 - Oct 26 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

MJE5852G Vipimo

Nambari ya Sehemu:	MJE5852G
Chapa:	Rochester Electronics
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	semiconductor tofauti
Kitengo kidogo:	transistors - bipolar (bjt) - moja
Mtengenezaji:	Rochester Electronics
mfululizo:	SWITCHMODE™
kifurushi:	Bulk
hali ya sehemu:	Active
aina ya transistor:	PNP
sasa - mtoza (ic) (max):	8 A
mgawanyiko wa mtozaji wa mtozaji wa voltage (max):	400 V
vce kueneza (max) @ ib, ic:	5V @ 3A, 8A
sasa - kata ya mtoza (max):	-
dc current gain (hfe) (min) @ ic, vce:	5 @ 5A, 5V
nguvu - max:	80 W
mzunguko - mpito:	-
joto la uendeshaji:	-65°C ~ 150°C (TJ)
aina ya ufungaji:	Through Hole
kifurushi / kesi:	TO-220-3
kifurushi cha kifaa cha wasambazaji:	TO-220AB

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