2SA1955FVATPL3Z | Toshiba Electronic Devices and Storage Corporation 2SA1955FVATPL3Z

2SA1955FVATPL3Z

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Nambari ya Sehemu	2SA1955FVATPL3Z
LIXINC Part #	2SA1955FVATPL3Z
Mtengenezaji	Toshiba Electronic Devices and Storage Corporation
Kategoria	semiconductor tofauti › transistors - bipolar (bjt) - moja
Maelezo	TRANS PNP 12V 0.4A VESM
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	2SA1955FVATPL3Z Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 27 - Oct 31 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

2SA1955FVATPL3Z Vipimo

Nambari ya Sehemu:	2SA1955FVATPL3Z
Chapa:	Toshiba Electronic Devices and Storage Corporation
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	semiconductor tofauti
Kitengo kidogo:	transistors - bipolar (bjt) - moja
Mtengenezaji:	Toshiba Electronic Devices and Storage Corporation
mfululizo:	-
kifurushi:	Tape & Reel (TR)Cut Tape (CT)
hali ya sehemu:	Obsolete
aina ya transistor:	PNP
sasa - mtoza (ic) (max):	400 mA
mgawanyiko wa mtozaji wa mtozaji wa voltage (max):	12 V
vce kueneza (max) @ ib, ic:	250mV @ 10mA, 200mA
sasa - kata ya mtoza (max):	100nA (ICBO)
dc current gain (hfe) (min) @ ic, vce:	300 @ 10mA, 2V
nguvu - max:	100 mW
mzunguko - mpito:	130MHz
joto la uendeshaji:	150°C (TJ)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	SC-101, SOT-883
kifurushi cha kifaa cha wasambazaji:	CST3

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