IS43DR16160B-3DBL | ISSI (Integrated Silicon Solution, Inc.) IS43DR16160B-3DBL | IS43DR16160B-3DBL Inventory, Best Pricing

IS43DR16160B-3DBL

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Nambari ya Sehemu	IS43DR16160B-3DBL
LIXINC Part #	IS43DR16160B-3DBL
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 256MBIT PARALLEL 84TWBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS43DR16160B-3DBL Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 18 - Oct 22 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS43DR16160B-3DBL Vipimo

Nambari ya Sehemu:	IS43DR16160B-3DBL
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Active
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	SDRAM - DDR2
saizi ya kumbukumbu:	256Mb (16M x 16)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	333 MHz
andika wakati wa mzunguko - neno, ukurasa:	15ns
muda wa kufikia:	450 ps
voltage - ugavi:	1.7V ~ 1.9V
joto la uendeshaji:	0°C ~ 70°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	84-TFBGA
kifurushi cha kifaa cha wasambazaji:	84-TWBGA (8x12.5)