AS4C128M32MD2-18BCN | Alliance Memory, Inc. AS4C128M32MD2-18BCN | AS4C128M32MD2-18BCN Inventory, Best Pricing

AS4C128M32MD2-18BCN

Panua

Kwa Marejeleo Pekee

Nambari ya Sehemu	AS4C128M32MD2-18BCN
LIXINC Part #	AS4C128M32MD2-18BCN
Mtengenezaji	Alliance Memory, Inc.
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 4GBIT PARALLEL 134FBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	AS4C128M32MD2-18BCN Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 24 - Oct 28 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

AS4C128M32MD2-18BCN Vipimo

Nambari ya Sehemu:	AS4C128M32MD2-18BCN
Chapa:	Alliance Memory, Inc.
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	Alliance Memory, Inc.
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Obsolete
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	SDRAM - Mobile LPDDR2
saizi ya kumbukumbu:	4Gb (128M x 32)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	533 MHz
andika wakati wa mzunguko - neno, ukurasa:	15ns
muda wa kufikia:	-
voltage - ugavi:	1.14V ~ 1.95V
joto la uendeshaji:	-25°C ~ 85°C (TC)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	134-VFBGA
kifurushi cha kifaa cha wasambazaji:	134-FBGA (10x11.5)