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MT46H32M16LFBF-6 AT:B

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Nambari ya Sehemu	MT46H32M16LFBF-6 AT:B
LIXINC Part #	MT46H32M16LFBF-6 AT:B
Mtengenezaji	Micron Technology
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC DRAM 512MBIT PARALLEL 60VFBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	MT46H32M16LFBF-6 AT:B Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 18 - Oct 22 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

MT46H32M16LFBF-6 AT:B Vipimo

Nambari ya Sehemu:	MT46H32M16LFBF-6 AT:B
Chapa:	Micron Technology
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	Micron Technology
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Obsolete
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	DRAM
teknolojia:	SDRAM - Mobile LPDDR
saizi ya kumbukumbu:	512Mb (32M x 16)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	166 MHz
andika wakati wa mzunguko - neno, ukurasa:	15ns
muda wa kufikia:	5 ns
voltage - ugavi:	1.7V ~ 1.95V
joto la uendeshaji:	-40°C ~ 105°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	60-VFBGA
kifurushi cha kifaa cha wasambazaji:	60-VFBGA (8x9)