IS61NVF51236-6.5B3I | ISSI (Integrated Silicon Solution, Inc.) IS61NVF51236-6.5B3I | IS61NVF51236-6.5B3I Inventory, Best Pricing

IS61NVF51236-6.5B3I

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Nambari ya Sehemu	IS61NVF51236-6.5B3I
LIXINC Part #	IS61NVF51236-6.5B3I
Mtengenezaji	ISSI (Integrated Silicon Solution, Inc.)
Kategoria	nyaya zilizounganishwa › kumbukumbu
Maelezo	IC SRAM 18MBIT PARALLEL 165TFBGA
Mzunguko wa maisha	Inayotumika
RoHS	Hakuna Taarifa za RoHS
EDA/CAD Models	IS61NVF51236-6.5B3I Alama ya PCB na Alama
Maghala	Marekani, Ulaya, China, Hong Kong SAR
Uwasilishaji Unaokadiriwa	Oct 27 - Oct 31 2024(Chagua Usafirishaji wa Haraka)
Udhamini	Hadi mwaka 1 [Dhamana-Chache]*
Malipo
Usafirishaji

IS61NVF51236-6.5B3I Vipimo

Nambari ya Sehemu:	IS61NVF51236-6.5B3I
Chapa:	ISSI (Integrated Silicon Solution, Inc.)
Mzunguko wa maisha:	Active
RoHS:	Lead free / RoHS Compliant
Kategoria:	nyaya zilizounganishwa
Kitengo kidogo:	kumbukumbu
Mtengenezaji:	ISSI (Integrated Silicon Solution, Inc.)
mfululizo:	-
kifurushi:	Tray
hali ya sehemu:	Obsolete
aina ya kumbukumbu:	Volatile
muundo wa kumbukumbu:	SRAM
teknolojia:	SRAM - Synchronous, SDR
saizi ya kumbukumbu:	18Mb (512K x 36)
kiolesura cha kumbukumbu:	Parallel
mzunguko wa saa:	133 MHz
andika wakati wa mzunguko - neno, ukurasa:	-
muda wa kufikia:	6.5 ns
voltage - ugavi:	2.375V ~ 2.625V
joto la uendeshaji:	-40°C ~ 85°C (TA)
aina ya ufungaji:	Surface Mount
kifurushi / kesi:	165-TBGA
kifurushi cha kifaa cha wasambazaji:	165-TFBGA (13x15)